DEFECT STRUCTURE OF STRONTIUM-TITANATE THIN-FILMS

被引：11

作者：

FEIL, WA ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] MOTOROLA ADV PROD RES & DEV LAB,AUSTIN,TX 78721

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 06期

关键词：

D O I：

10.1063/1.354492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical and optical properties of deep-level defects in SrTiO3 thin films grown by organometallic chemical-vapor deposition were investigated. Transient photocapacitance spectroscopy was used to determine the deep-level defect structure. Metal/insulator/semiconductor diodes were used for these measurements. The dominant defects in the SrTiO3 consisted of a series of deep-level trapping states with energies in the range of E(v)+2.4 to E(v)+3.15 eV and a series of shallower traps near the conduction-band edge. The defect concentration ranged from 10(14) to 10(18) cm-3 in the as-grown films.

引用

页码：3927 / 3931

页数：5

共 14 条

[1] STUDY OF GENERATION AND RECOMBINATION OF FREE CARRIERS IN SRTIO3 BY 2-PHOTON EXCITATION [J].