A 2-PHASE GAAS CERMET GATE CHARGE-COUPLED DEVICE

被引：9

作者：

LENOBLE, M ^{[1
]}

CRESSWELL, JV ^{[1
]}

JOHNSON, RR ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT PHYS,VANCOUVER V6T 1W5,BC,CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 08期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/16.57128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design, fabrication, and operation of a 64-pixel, 2-phase GaAs cermet gate charge-coupled device (CMCCD) is described. A castellated channel geometry provides the built-in electric field for directing the flow of signal charge within the CMCCD channel. A two-dimensional computer model for the electrostatic potential within a single pixel of the CMCCD is used to verify the presence of the built-in electric field and is also used to show the possibility for the existence of energy troughs under the cermet gates. Energy troughs within the CMCCD are undesirable as they increase the dispersion of signal charge through the device. It is shown that the energy troughs are overcome by increasing the clock voltage amplitude. A 64-pixel, 2-phase CMCCD demonstrated a charge transfer efficiency of 0.996 when operated at 46 MHz. © 1990 IEEE

引用

页码：1796 / 1799

页数：4

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