OPERATION OF A SINGLE-PHASE CCD ON GAAS AT 560 MHZ

被引：4

作者：

HAYES, AJ

DAVIES, JT

ECCLESTON, W

机构：

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1985年 / 132卷 / 01期

关键词：

D O I：

10.1049/ip-i-1.1985.0008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：34 / 36

页数：3

共 7 条

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[5]

ECCLESTON W, 1974, Patent No. 1498940

[6] A 2-PHASE CCD ON GAAS WITH 0.3-MU-M-WIDE ELECTRODE GAPS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1195-1197

[7] ELECTRON DYNAMICS IN SHORT CHANNEL FIELD-EFFECT TRANSISTORS [J].

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