CHARGE-COUPLED-DEVICES IN GALLIUM-ARSENIDE

被引：5

作者：

DEYHIMY, I

ANDERSON, RJ

EDEN, RC

HARRIS, JS

机构：

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 05期

关键词：

Compendex;

D O I：

10.1049/ip-i-1.1980.0055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES, CHARGE COUPLED

引用

页码：278 / 286

页数：9

共 9 条

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KOSONOCK.WF ;

RAMBERG, EG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :798-&

[2] GAAS CHARGE-COUPLED-DEVICES [J].

DEYHIMY, I ;

HARRIS, JS ;

EDEN, RC ;

EDWALL, DD ;

ANDERSON, SJ ;

BUBULAC, LO .

APPLIED PHYSICS LETTERS, 1978, 32 (06) :383-385

[3] 500-MHZ GAAS CHARGE-COUPLED DEVICE [J].

DEYHIMY, I ;

EDEN, RC ;

ANDERSON, RJ ;

HARRIS, JS .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :151-153

[4]

DEYHIMY I, 1978, 78 INT C APPL CHARG

[5] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J].

EDEN, RC ;

WELCH, BM ;

ZUCCA, R ;

LONG, SI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :299-317

[6]

EDEN RC, 1980, VERY LARGE SCALE INT

[7]

KELLNER W, 1977, INT ELECTRON DEVICES

[8] PROTON-BOMBARDMENT ISOLATED GAALAS-GAAS CHARGE-COUPLED-DEVICES [J].

LIU, YZ ;

ANDERSON, RJ ;

DEYHIMY, I ;

TOMASETTA, LR .

ELECTRONICS LETTERS, 1980, 16 (09) :327-329

[9] NEW STRUCTURES FOR CHARGE-COUPLED DEVICES [J].

SCHUERMEYER, FL ;

BELT, RA ;

YOUNG, CR ;

BLASINGA.JM .

PROCEEDINGS OF THE IEEE, 1972, 60 (11) :1444-1445

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