SUBPICOSECOND HOT HOLE DYNAMICS IN HIGHLY EXCITED GAAS

被引:11
作者
GONG, T
FAUCHET, PM
YOUNG, JF
KELLY, PJ
机构
[1] UNIV ROCHESTER,DEPT ELECT ENGN,ROCHESTER,NY 14623
[2] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA
关键词
D O I
10.1063/1.108899
中图分类号
O59 [应用物理学];
学科分类号
摘要
The buildup of band-edge gain is observed on a subpicosecond time scale in highly excited intrinsic GaAs. Using a kinetic model to fit the experimentally determined ''pin time'' at different wavelengths, the transient behavior of the optically injected hole temperature is determined. The data are not consistent with a simple decay of the hot hole temperature due to phonon emission processes. We show that a simple estimate of the energy transfer from electrons to holes via Coulomb scattering qualitatively accounts for the observed behavior of the hole temperature.
引用
收藏
页码:522 / 524
页数:3
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