SUBPICOSECOND HOT HOLE DYNAMICS IN HIGHLY EXCITED GAAS

被引：11

作者：

GONG, T

FAUCHET, PM

YOUNG, JF

KELLY, PJ

机构：

[1] UNIV ROCHESTER,DEPT ELECT ENGN,ROCHESTER,NY 14623

[2] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.108899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The buildup of band-edge gain is observed on a subpicosecond time scale in highly excited intrinsic GaAs. Using a kinetic model to fit the experimentally determined ''pin time'' at different wavelengths, the transient behavior of the optically injected hole temperature is determined. The data are not consistent with a simple decay of the hot hole temperature due to phonon emission processes. We show that a simple estimate of the energy transfer from electrons to holes via Coulomb scattering qualitatively accounts for the observed behavior of the hole temperature.

引用

收藏

页码：522 / 524

页数：3

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