ANALYSIS OF THE OXYGEN CONTAMINATION PRESENT IN SINX FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE

被引：15

作者：

GARCIA, S ^{[1
]}

MARTIN, JM ^{[1
]}

FERNANDEZ, M ^{[1
]}

MARTIL, I ^{[1
]}

GONZALEZDIAZ, G ^{[1
]}

机构：

[1] CSIC, INST CIENCIA MAT, E-28006 MADRID, SPAIN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1116/1.579835

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：826 / 830

页数：5

共 19 条

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[2] ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION OF SILICON OXYNITRIDES USING TRIS(DIMETHYLAMINO)SILANE
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[3] CHARACTERIZATION OF SILICON-OXYNITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED CVD
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) : 1458 - 1464
[4] LOW HYDROGEN CONTENT SILICON-NITRIDE FILMS FROM ELECTRON-CYCLOTRON-RESONANCE PLASMAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) : 3277 - 3281
[5] OPTICAL CHARACTERIZATION OF SILICON-NITRIDE FILMS DEPOSITED BY ECR-CVD
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[J]. VACUUM, 1994, 45 (10-11) : 1027 - 1028
[6] GARCIA S, IN PRESS J NONCRYST
[7] CONTAMINATION BY SPUTTERING IN MIRROR FIELD ELECTRON-CYCLOTRON RESONANCE MICROWAVE PLASMA SOURCES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (05): : 3104 - 3113
[8] BEHAVIOR OF AR PLASMAS FORMED IN A MIRROR FIELD ELECTRON-CYCLOTRON RESONANCE MICROWAVE ION-SOURCE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 2893 - 2899
[9] OPTICAL ANALYSIS OF ABSORBING THIN-FILMS - APPLICATION TO TERNARY CHALCOPYRITE SEMICONDUCTORS
HERNANDEZROJAS, JL
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[J]. APPLIED OPTICS, 1992, 31 (10): : 1606 - 1611
[10] KNOLLE WR, 1988, J ELECTROCHEM SOC, V135, P1212

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