ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION OF SILICON OXYNITRIDES USING TRIS(DIMETHYLAMINO)SILANE

被引:55
作者
BOUDREAU, M
BOUMERZOUG, M
MASCHER, P
JESSOP, PE
机构
[1] Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton
关键词
D O I
10.1063/1.110243
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new compound, tris(dimethylamino)silane was used as an organosilicon source for the deposition of silicon oxynitride thin films. The depositions were carried out at low substrate temperatures (< 150-degrees-C) in an electron cyclotron resonance plasma enhanced chemical vapor deposition reactor. Films with compositions varying from Si3N4 to SiO2 were deposited on silicon substrates by varying the N2/O2 flow ratio to the plasma chamber. In situ ellipsometry measurements of the film optical index were well correlated with film composition. Auger electron spectroscopy showed that only low levels of carbon (< 3 at. %) were present, while Fourier transform infrared spectroscopy showed low levels of bonded hydrogen. The deposition rate of high quality Si3N4 was as high as 220 angstrom/min.
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页码:3014 / 3016
页数:3
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