LOW-TEMPERATURE DEPOSITION OF HYDROGEN-FREE SILICON OXYNITRIDE WITHOUT STRESS BY THE REMOTE PLASMA TECHNIQUE

Hydrogen-free silicon oxynitride was deposited at 300°C through the reaction of Si from a solid source and neutral oxygen and nitrogen species activated in remote ECR plasma. The IR absorption measurement clearly showed that the composition of oxygen and nitrogen in the film was controlled by simply varying the flow ratio of the source gases of O2and N2. Oxynitride films without internal stress could be realized by adjusting the film composition of oxygen and nitrogen. The deposited film had high resistivity and breakdown field, and the interface state density between the film and Si was in the lower range of 1010cm-2eV-1, which were sufficient for device application. © 1990 IOP Publishing Ltd.