NIOBIUM NITRIDE NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS WITH SPUTTERED AMORPHOUS-SILICON BARRIERS

被引：33

作者：

JILLIE, DW ^{[1
]}

KROGER, H ^{[1
]}

SMITH, LN ^{[1
]}

CUKAUSKAS, EJ ^{[1
]}

NISENOFF, M ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 08期

关键词：

D O I：

10.1063/1.93214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：747 / 750

页数：4

共 12 条

[1]

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[9] NIOBIUM NITRIDE JOSEPHSON TUNNEL-JUNCTIONS WITH OXIDIZED AMORPHOUS-SILICON BARRIERS [J].

SHINOKI, F ;

SHOJI, A ;

KOSAKA, S ;

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HAYAKAWA, H .

APPLIED PHYSICS LETTERS, 1981, 38 (04) :285-286

[10] SUPERCONDUCTING TUNNELING JUNCTIONS OF V3SI-SIOX-MO3RE2 [J].

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KAWABE, U .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :239-240

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