16-GHZ BANDWIDTH INALAS-INGAAS MONOLITHICALLY INTEGRATED P-I-N/HBT PHOTORECEIVER

被引：22

作者：

GUTIERREZAITKEN, AL ^{[1
]}

YANG, K ^{[1
]}

ZHANG, X ^{[1
]}

HADDAD, GI ^{[1
]}

BHATTACHARYA, P ^{[1
]}

LUNARDI, LM ^{[1
]}

机构：

[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 11期

关键词：

D O I：

10.1109/68.473491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithically integrated p-i-n transimpedance-amplifier photoreceiver based on an InAlAs-InGaAs HBT structure lattice-matched to InP has been designed, fabricated, and characterized, The p-i-n photodiode is implemented using the InGaAs base and collector layers of the I-IBT. A three-stage amplifier with a feedback resistance of 550 Ohm demonstrated a transimpedance gain of 46 dB Ohm and a bandwidth of 20 GHz, corresponding to a transimpedance-bandwidth product of 4 THz Ohm. The measured -3 dB bandwidth of the integrated photoreceiver is 16 GHz, which is the highest reported to date for an InAlAs-InGaAs p-i-n/HBT monolithically integrated photoreceiver and is sufficient for 20-Gb/s operation.

引用

页码：1339 / 1341

页数：3

共 7 条

[1] HIGH-SPEED MONOLITHIC P-I-N/HBT AND HPT/HBT PHOTORECEIVERS IMPLEMENTED WITH SIMPLE PHOTOTRANSISTOR STRUCTURE [J].

CHANDRASEKHAR, S ;

LUNARDI, LM ;

GNAUCK, AH ;

HAMM, RA ;

QUA, GJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (11) :1316-1318

[2]

COWLES JC, 1993, FIFTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, P385

[3]

GUTIERREZAITKEN AL, 1994, SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS, P247, DOI 10.1109/ICIPRM.1994.328213

[4]

KUEBART W, 1994, PD 3 4 ECOC 94 FLORE

[5] A 12-GB/S HIGH-PERFORMANCE, HIGH-SENSITIVITY MONOLITHIC P-I-N/HBT PHOTORECEIVER MODULE FOR LONG-WAVELENGTH TRANSMISSION-SYSTEMS [J].

LUNARDI, LM ;

CHANDRASEKHAR, S ;

GNAUCK, AH ;

BURRUS, CA ;

HAMM, RA ;

SULHOFF, JW ;

ZYSKIND, JL .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (02) :182-184

[6]

Montgomery R. K., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P423, DOI 10.1109/IEDM.1992.307392

[7]

PEDROTTI KD, 1991, IEEE GAAS IC S TECH, P205

← 1 →