HIGH-SPEED MONOLITHIC P-I-N/HBT AND HPT/HBT PHOTORECEIVERS IMPLEMENTED WITH SIMPLE PHOTOTRANSISTOR STRUCTURE

被引：77

作者：

CHANDRASEKHAR, S ^{[1
]}

LUNARDI, LM ^{[1
]}

GNAUCK, AH ^{[1
]}

HAMM, RA ^{[1
]}

QUA, GJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 11期

关键词：

D O I：

10.1109/68.250055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic photoreceivers, using the base-collector junction of an InP/InGaAs phototransistor structure for a p-i-n photodetector, have been fabricated for the first time. We have achieved bandwidths as high as 3 GHz and bit rate gs high as 5 Gb/s, with sensitivities of -22.5 dBm and -21.5 dBm for light focused on the p-i-n or on the first stage transistor of the preamplifier, respectively. These results represent the highest operating speed demonstrated for any phototransistor-based receiver.

引用

页码：1316 / 1318

页数：3

共 7 条

[1] A 10 GB/S HIGH-SENSITIVITY, MONOLITHICALLY INTEGRATED P-I-N-HEMT OPTICAL RECEIVER [J].