INTEGRATED INP/GAINAS HETEROJUNCTION BIPOLAR PHOTORECEIVER

被引：20

作者：

CHANDRASEKHAR, S

CAMPBELL, JC

DENTAI, AG

JOYNER, CH

QUA, GJ

GNAUCK, AH

FEUER, MD

机构：

[1] AT&T Bell Lab, United States

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 23期

关键词：

Optoelectronic Devices - Semiconducting Indium Compounds - Signal Receivers - Transistors; Bipolar;

D O I：

10.1049/el:19880986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an integrated photodetector-preamplifier circuit implemented with InP/GaInAs heterojunction bipolar transistors. The circuit consists of a three-terminal phototransistor, three bipolar transistors and three resistors. A receiver sensitivity of -26 dbm at 100 Mbit/s has been achieved.

引用

页码：1443 / 1445

页数：3

共 6 条

[1] SMALL-AREA HIGH-SPEED IN P-INGAAS PHOTO-TRANSISTOR
CAMPBELL, JC
BURRUS, CA
DENTAI, AG
OGAWA, K
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 820 - 821
[2] Hirano M., 1987, Optoelectronics - Devices and Technologies, V2, P137
[3] KASPER B, 1988, OPTICAL FIBER TELECO, V2
[4] HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS
NOTTENBURG, RN
BISCHOFF, JC
PANISH, MB
TEMKIN, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) : 282 - 284
[5] INGAAS/INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH NEAR-IDEAL BETA-VERSUS IC CHARACTERISTIC
NOTTENBURG, RN
TEMKIN, H
PANISH, MB
BHAT, R
BISCHOFF, JC
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 643 - 645
[6] MONOLITHIC INTEGRATED PHOTORECEIVER IMPLEMENTED WITH GAAS/GAAIAS HETEROJUNCTION BIPOLAR PHOTOTRANSISTOR AND TRANSISTORS
WANG, H
ANKRI, D
[J]. ELECTRONICS LETTERS, 1986, 22 (07) : 391 - 393

← 1 →