AN ENSEMBLE MONTE-CARLO STUDY OF HIGH-FIELD TRANSPORT IN BETA-SIC

被引:51
作者
TSUKIOKA, K
VASILESKA, D
FERRY, DK
机构
[1] Center for Solid State Electronics Research, Arizona State University, Tempe, AZ
来源
PHYSICA B | 1993年 / 185卷 / 1-4期
关键词
D O I
10.1016/0921-4526(93)90279-F
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The high-field transport of electrons in beta-SiC is investigated by use of an ensemble Monte Carlo technique. We consider scattering by acoustic deformation potential, polar optical phonon, two different equivalent intervalley phonons (one first-order and one zero-order interaction), impurity scattering and impact ionization. The intervalley coupling constants and deformation potential constant are estimated by fitting the ohmic mobility to the measured experimental values over the temperature range 50-1000 K. Polar runaway occurs above 5 x 10(5) V/cm. The distribution can be partially stabilized by impact ionization processes, but the runaway is still observed. For a nonparabolic band model, the drift velocity has a gentle peak around 4 x 10(5) V/cm. The peak value is 1.9 x 10(7) cm/s, which is comparable to the experimental value observed in 6H-SiC (2.1 x 10(7) cm/s).
引用
收藏
页码:466 / 470
页数:5
相关论文
共 20 条
[1]   THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].
ANDERSON, CL ;
CROWELL, CR .
PHYSICAL REVIEW B, 1972, 5 (06) :2267-&
[2]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[3]  
BERMAN HS, 1974, SILICON CARBIDE, P500
[4]  
BROOKS H, 1951, PHYS REV, V83, P879
[5]   HOT-ELECTRON MICROWAVE CONDUCTIVITY OF WIDE BANDGAP SEMICONDUCTORS [J].
DAS, P ;
FERRY, DK .
SOLID-STATE ELECTRONICS, 1976, 19 (10) :851-855
[6]  
DEAN PJ, 1977, J LUMIN, V15, P229
[7]   MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].
FAWCETT, W ;
BOARDMAN, AD ;
SWAIN, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&
[8]   1ST-ORDER OPTICAL AND INTERVALLEY SCATTERING IN SEMICONDUCTORS [J].
FERRY, DK .
PHYSICAL REVIEW B, 1976, 14 (04) :1605-1609
[9]   HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS [J].
FERRY, DK .
PHYSICAL REVIEW B, 1975, 12 (06) :2361-2369
[10]  
FERRY DK, 1991, SEMICONDUCTORS, P146