A BURIED-CAP PLANAR STRIPE (BCP) GAALAS LASER WITH ZNSE CURRENT-CONFINEMENT REGION BY MBE

被引:6
作者
NIINA, T
YAMAGUCHI, T
YODOSHI, K
YAGI, K
HAMADA, H
机构
关键词
D O I
10.1109/JQE.1983.1071971
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1021 / 1025
页数:5
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[1]   TRANSVERSE-MODE STABILIZED GA1-XALXAS VISIBLE DIODE-LASERS [J].
KAJIMURA, T ;
KURODA, T ;
YAMASHITA, S ;
NAKAMURA, M ;
UMEDA, J .
APPLIED OPTICS, 1979, 18 (11) :1812-1815
[2]   NEW STRUCTURES OF GAALAS LATERAL-INJECTION LASER FOR LOW-THRESHOLD AND SINGLE-MODE OPERATION [J].
SUSAKI, W ;
TANAKA, T ;
KAN, H ;
ISHII, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :587-591
[3]   VISIBLE GAALAS V-CHANNELED SUBSTRATE INNER STRIPE LASER WITH STABILIZED MODE USING P-GAAS SUBSTRATE [J].
YAMAMOTO, S ;
HAYASHI, H ;
YANO, S ;
SAKURAI, T ;
HIJIKATA, T .
APPLIED PHYSICS LETTERS, 1982, 40 (05) :372-374