SMALL-SIGNAL BEHAVIOR OF GUNN DIODES

被引：11

作者：

HOLMSTROM, R

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 09期

关键词：

D O I：

10.1109/T-ED.1967.15989

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：464 / +

页数：1

共 14 条

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[2]

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HAKKI, BW ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :94-+

[7]

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HOLMSTRO.R ;

DERFLER, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) :539-+

[9] FREQUENCY-MODES OF GUNN-EFFECT OSCILLATOR [J].

IKOMA, T ;

TORITSUKA, H ;

YANAI, H .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (12) :1997-+

[10] NONLINEAR SPACE-CHARGE DOMAIN DYNAMICS IN A SEMICONDUCTOR WITH NEGATIVE DIFFERENTIAL MOBILITY [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :27-+

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