A CMOS FRONT-END CIRCUIT FOR A CAPACITIVE PRESSURE SENSOR

被引：5

作者：

KJENSMO, A

HANNEBORG, A

GAKKESTAD, J

VONDERLIPPE, H

机构：

[1] Center for Industrial Research, 0314 Oslo 3

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 21卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)85020-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS front-end circuit for a high quality capacitive silicon pressure sensor is presented. Two different circuit designs are discussed and measurement results from prototypes are shown. A digital circuit which is designed to interface both front-end designs is described. Measured temperature drift for the two front-end designs shows a drift, in the range 20 to 100°C, of less than 2000 and 10 ppm, respectively. Long-term drift well below 100 ppm has been measured. © 1990.

引用

页码：102 / 107

页数：6

共 3 条

[1] CMOS SCHMITT TRIGGERS [J].