CALCULATIONS OF MELTING THRESHOLD ENERGIES OF CRYSTALLINE AND AMORPHOUS MATERIALS DUE TO PULSED-LASER IRRADIATION

被引：39

作者：

ONG, CK

TAN, HS

SIN, EH

机构：

[1] Natl Univ of Singapore, Kent Ridge, Singapore, Natl Univ of Singapore, Kent Ridge, Singapore

来源：

MATERIALS SCIENCE AND ENGINEERING | 1986年 / 79卷 / 01期

关键词：

ALUMINUM AND ALLOYS - Radiation Effects - LASER BEAMS - Effects - LASER PULSES - MATERIALS - Amorphous;

D O I：

10.1016/0025-5416(86)90389-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The melting threshold energies E//t//h of crystalline aluminum (c-Al), crystalline silicon (c-Si) and amorphous silicon (a-Si) due to pulsed-laser irradiation under various laser conditions have been calculated using a heat flow model. By employing a set of values derived from various reliable measurements on temperature-dependent optical and thermal properties of c-Al and c-Si, our computational model was able to yield values of E//t//h in agreement with the measured values.

引用

页码：79 / 85

页数：7

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