DEPOSITION OF FERROELECTRIC PZT THIN-FILMS BY PLANAR MULTITARGET SPUTTERING

被引：32

作者：

BRUCHHAUS, R

HUBER, H

PITZER, D

WERSING, W

机构：

[1] SIEMENS AG, Corporate Research and Development, Munich

来源：

FERROELECTRICS | 1992年 / 127卷 / 1-4期

关键词：

D O I：

10.1080/00150199208223360

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A planar multi-target sputtering system was used to deposit ferroelectric lead zirconate titanate (PZT) films. At substrate temperatures of about 450-degrees-C "in-situ" deposition of single phase perovskite PZT was obtained. By investigation with SEM and TEM films exhibited a columnar structure with crystallites of about 200 nm in size. The permittivity of the films varied from 450-600. The films exhibited hysteresis loops, remanent polarization of 15-20 muC/cm2 and coercive field strength of 70-85 kV/cm.

引用

页码：137 / 142

页数：6

共 8 条

[1] PREPARATION AND PROPERTIES OF (PB, LA)TIO3 EPITAXIAL THIN-FILMS BY MULTITARGET SPUTTERING [J].