INVESTIGATION OF HALL-COEFFICIENT IN EPITAXIAL LAYERS OF ALXGA1-XAS SOLID-SOLUTIONS DOPED WITH TELLURIUM

被引:3
作者
KRAVCHENKO, AF [1 ]
MARONCHUK, YE [1 ]
YAKUSHEVA, NA [1 ]
机构
[1] ACAD SCI USSR,SEMICOND PHYS INST,SIBERIAN BRANCH,NOVOSIBIRSK,USSR
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 30卷 / 02期
关键词
D O I
10.1002/pssa.2210300214
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:543 / 548
页数:6
相关论文
共 23 条
[1]  
ALFEROV ZI, 1972, FIZ TEKH POLUPROV, V6, P1879
[3]   HIGH-TEMPERATURE HALL COEFFICIENT IN GAS [J].
AUKERMAN, LW ;
WILLARDSON, RK .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (05) :939-940
[4]   PREPARATION AND PROPERTIES OF ALAS-GAAS MIXED CRYSTALS [J].
BLACK, JF ;
KU, SM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :249-&
[5]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[6]   LIQUID PHASE EPITAXY OF ALXGA1-XAS FOR MONOLITHIC PLANAR STRUCTURES [J].
BLUM, JM ;
SHIH, KK .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10) :1498-&
[7]  
BUTTER JK, 1970, APPL PHYS LETT, V17, P403
[8]   COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J].
CASEY, HC ;
PANISH, MB .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4910-&
[9]   EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J].
CRAFORD, MG ;
STILLMAN, GE ;
ROSSI, JA ;
HOLONYAK, N .
PHYSICAL REVIEW, 1968, 168 (03) :867-&
[10]  
DEBYE PW, 1954, PHYS REV, V93, P705