PREPARATION AND PROPERTIES OF ALAS-GAAS MIXED CRYSTALS

[1] ABRAHAMS M, 1960, PROPERTIES ELEMENTAL

[2] REFLECTIVITY AND BAND STRUCTURE OF GAAS GAP AND GA(AS P) ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 662 - +

[3] BLACK JG, TO BE PUBLISHED

[4] P-N JUNCTION LASERS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +

[5] RECOMBINATION SCHEME + INTRINSIC GAP VARIATION IN GAAS1-XPX SEMICONDUCTORS FROM ELECTRON BEAM + P-N DIODE EXCITATION (77 + 300 DEGREES K E) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (07) : 144 - &

[6] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[7] FENNER GE, 1964, PHYS REV, V134, P1113

[8] FOLBERTH OG, 1955, Z NATURFORSCH, VA 10, P502

[9] GATOS HC, 1960, PROPERTIES ELEMEN ED

[10] GRUBEL RO, 1961, METALLURGY ELEMEN ED

[1] ABRAHAMS M, 1960, PROPERTIES ELEMENTAL

[2] REFLECTIVITY AND BAND STRUCTURE OF GAAS GAP AND GA(AS P) ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 662 - +

[3] BLACK JG, TO BE PUBLISHED

[4] P-N JUNCTION LASERS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +

[5] RECOMBINATION SCHEME + INTRINSIC GAP VARIATION IN GAAS1-XPX SEMICONDUCTORS FROM ELECTRON BEAM + P-N DIODE EXCITATION (77 + 300 DEGREES K E) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (07) : 144 - &

[6] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[7] FENNER GE, 1964, PHYS REV, V134, P1113

[8] FOLBERTH OG, 1955, Z NATURFORSCH, VA 10, P502

[9] GATOS HC, 1960, PROPERTIES ELEMEN ED

[10] GRUBEL RO, 1961, METALLURGY ELEMEN ED