PREPARATION AND PROPERTIES OF ALAS-GAAS MIXED CRYSTALS

[21] OSWALD F, 1959, Z NATURFORSCH, VA 14, P374

[22] PAUL W, 1961, J APPL PHYS, V32, P2080

[23] ELECTROLUMINESCENCE AND LASING ACTION IN GAASXP1-X [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) : 684 - &

[24] REISS H, 1964, PROGRESS SOLID ST ED, pCH7

[25] SEITZ F, 1956, SOLID STATE PHYSI ED, V3

[26] STAMBAUGH EP, 1960, 10 BIM REP

[27] STAMBAUGH EP, 1961, METALLURGY ELEMENTAL

[28] STAMBAUGH EP, 1962, COMPOUND SEMICONDUCT, V1

[29] SUMMERGRAD R, PRIVATE COMMUNICATIO

[30] WEISBERG L, 1960, ERDTM60759 ASTIA ED

[21] OSWALD F, 1959, Z NATURFORSCH, VA 14, P374

[22] PAUL W, 1961, J APPL PHYS, V32, P2080

[23] ELECTROLUMINESCENCE AND LASING ACTION IN GAASXP1-X [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) : 684 - &

[24] REISS H, 1964, PROGRESS SOLID ST ED, pCH7

[25] SEITZ F, 1956, SOLID STATE PHYSI ED, V3

[26] STAMBAUGH EP, 1960, 10 BIM REP

[27] STAMBAUGH EP, 1961, METALLURGY ELEMENTAL

[28] STAMBAUGH EP, 1962, COMPOUND SEMICONDUCT, V1

[29] SUMMERGRAD R, PRIVATE COMMUNICATIO

[30] WEISBERG L, 1960, ERDTM60759 ASTIA ED