EVIDENCE FOR THE ELECTRON TRAPS AT DISLOCATIONS IN GAAS CRYSTALS

被引：185

作者：

WOSINSKI, T ^{[1
]}

机构：

[1] UNIV GOTTINGEN,INST PHYS 4,D-3400 GOTTINGEN,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 04期

关键词：

D O I：

10.1063/1.342974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1566 / 1570

页数：5

共 30 条

[1]

Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[2]

ALEXANDER H, 1979, J PHYS PARIS, V40

[3] DEFORMATION-INDUCED POINT-DEFECTS IN GERMANIUM [J].

BAUMANN, FH ;

SCHROTER, W .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (01) :55-61

[4] DISLOCATION VELOCITIES IN GAAS [J].

CHOI, SK ;

MIHARA, M ;

NINOMIYA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) :737-745

[5] OBSERVATION OF 1.13 EV POLARIZED LUMINESCENCE BAND IN PLASTICALLY DEFORMED GAAS [J].

DEPRAETERE, E ;

VIGNAUD, D ;

FARVACQUE, JL .

SOLID STATE COMMUNICATIONS, 1987, 64 (12) :1465-1468

[6] CATHODOLUMINESCENCE AND ELECTRICAL ANISOTROPY FROM ALPHA-DISLOCATIONS AND BETA-DISLOCATIONS IN PLASTICALLY DEFORMED GALLIUM-ARSENIDE [J].

ESQUIVEL, AL ;

SEN, S ;

LIN, WN .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2588-2603

[7] RECOMBINATION AT DISLOCATIONS [J].

FIGIELSKI, T .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1403-1412

[8] DLTS STUDY OF THE INFLUENCE OF PLASTIC-DEFORMATION ON DEEP LEVELS IN N-TYPE CDTE [J].

GELSDORF, F ;

SCHROTER, W .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (05) :L35-L41

[9]

GERTHSEN D, 1986, ACTA PHYS POL A, V69, P415

[10] STACKING-FAULT ENERGY AND IONICITY OF CUBIC-III-V COMPOUNDS [J].

GOTTSCHALK, H ;

PATZER, G ;

ALEXANDER, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01) :207-217

← 1 2 3 →