THERMAL ANNEALING OF THE EPITAXIAL AL/SI(111)7X7 INTERFACE - AL CLUSTERING, INTERFACIAL REACTION, AND AL-INDUCED P(+) DOPING

被引：24

作者：

WEN, HJ ^{[1
]}

DAHNEPRIETSCH, M ^{[1
]}

BAUER, A ^{[1
]}

CUBERES, MT ^{[1
]}

MANKE, I ^{[1
]}

KAINDL, G ^{[1
]}

机构：

[1] CSIC,INST CIENCIA MAT,E-28006 MADRID,SPAIN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 05期

关键词：

D O I：

10.1116/1.579480

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The structural and electronic properties of the epitaxial Al/Si(111)7x7 interface and their modifications upon thermal annealing were investigated by scanning tunneling microscopy, high-resolution photoelectron spectroscopy, and low-energy electron diffraction. Room-temperature deposition of 40 Angstrom Al on Si(111)7X7 is mainly characterized by epitaxial growth and a decrease of the Fermi-level position by 0.32 eV. Annealing at temperatures around 500 degrees C results in the formation of large Al clusters with a thin reacted film in between. Subsequent annealing up to 900 degrees C results in complete desorption of Al and a recovery of the original 7X7 surface structure, while a potential variation underneath the Si surface, completely different from that of the starting surface, is observed in the Si 2p photoemission spectra. These results strongly indicate the formation of a p(+)-Si layer induced by Al diffusion. (C) 1995 American Vacuum Society.

引用

页码：2399 / 2406

页数：8

共 20 条

[1] ABINITIO THEORY OF THE SI(111)-(7X7) SURFACE RECONSTRUCTION - A CHALLENGE FOR MASSIVELY PARALLEL COMPUTATION [J].