STUDY OF LAYER AND JUNCTION PROPERTIES OF BORON IMPLANTATION IN SILICON

被引：2

作者：

ANAND, KV

SOBHY, MI

ELDHAHER, AHG

机构：

[1] UNIV KENT,ELECTR LABS,CANTERBURY CT2 7NT,KENT,ENGLAND

[2] KUWAIT UNIV,PHYS DEPT,KUWAIT CITY,KUWAIT

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1976年 / 40卷 / 02期

关键词：

D O I：

10.1080/00207217608920556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：169 / 181

页数：13

共 14 条

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BARON, R ;

SHIFRIN, GA ;

MARSH, OJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&

[3]

Bicknell R. W., 1970, Radiation Effects, V6, P45, DOI 10.1080/00337577008235044

[4]

ELDHAHER AHG, 1974, THESIS U KENT

[5]

Grove A.S., 1991, Physics and Technology of Semiconductor Devices, P388

[6] ANNEALING OF GAMMA-RAY IRRADIATED N-TYPE GERMANIUM [J].

ISHINO, S ;

NAKAZAWA, F ;

HASIGUTI, RR .

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[7]

PAVLOV PV, 1966, SOV PHYS SOLID STATE, V7, P2386

[8]

Pickar K. A., 1970, Radiation Effects, V6, P89, DOI 10.1080/00337577008235049

[9]

SEIDEL TE, 1969, T METALL SOC AIME, V245, P491

[10]

Stephen J., 1971, Radiation Effects, V7, P73, DOI 10.1080/00337577108232566

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