ANNEALING OF GAMMA-RAY IRRADIATED N-TYPE GERMANIUM

被引:55
作者
ISHINO, S
NAKAZAWA, F
HASIGUTI, RR
机构
关键词
D O I
10.1016/0022-3697(63)90008-8
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:1033 / &
相关论文
共 20 条
[1]   ANNEALING OF GAMMA-RAY DAMAGE IN GERMANIUM [J].
ASADA, T ;
SAITO, H ;
OMURA, K ;
OKU, T ;
OKA, M .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (01) :93-94
[2]   MOBILITY OF RADIATION-INDUCED DEFECTS IN GERMANIUM [J].
BARUCH, P .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) :653-&
[3]   ENERGY LEVELS IN IRRADIATED GERMANIUM [J].
BLOUNT, EI .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1218-1221
[4]   ENERGY LEVELS IN IRRADIATED GERMANIUM [J].
BLOUNT, EI .
PHYSICAL REVIEW, 1959, 113 (04) :995-998
[5]   ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS [J].
BROWN, WL ;
AUGUSTYNIAK, WM ;
WAITE, TR .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1258-1268
[6]  
BROWN WL, 1953, PHYS REV, V92, P585
[7]   EFFECTS OF GAMMA-RADIATION ON GERMANIUM [J].
CLELAND, JW ;
CRAWFORD, JH ;
HOLMES, DK .
PHYSICAL REVIEW, 1956, 102 (03) :722-724
[8]   DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].
CORBETT, JW ;
WATKINS, GD ;
CHRENKO, RM ;
MCDONALD, RS .
PHYSICAL REVIEW, 1961, 121 (04) :1015-&
[9]  
CRAWFORD JH, 1959, J APPL PHYS, V30, P1204, DOI 10.1063/1.1735294
[10]   THEORY OF VACANCY ANNEALING IN IMPURE METALS [J].
DAMASK, AC ;
DIENES, GJ .
PHYSICAL REVIEW, 1960, 120 (01) :99-104