CONDUCTION MECHANISM OF HIGH-RESISTIVITY POLYCRYSTALLINE SILICON FILMS

被引：17

作者：

SAITO, Y

MIZUSHIMA, I

KUWANO, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.334387

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2010 / 2013

页数：4

共 9 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2] GRAIN-SIZE AND RESISTIVITY OF LPCVD POLYCRYSTALLINE SILICON FILMS [J].

COLINGE, JP ;

DEMOULIN, E ;

DELANNAY, F ;

LOBET, M ;

TEMERSON, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :2009-2014

[3]

GERZBERG L, 1980, IEEE ELECTR DEVICE L, V1, P38

[4] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&

[5]

KORSH GJ, 1978, SOLID STATE ELECTRON, V21, P1045, DOI 10.1016/0038-1101(78)90183-1

[6] SCALING LIMITATIONS OF MONOLITHIC POLYCRYSTALLINE-SILICON RESISTORS IN VLSI STATIC RAMS AND LOGIC [J].

LU, NCC ;

GERZBERG, L ;

MEINDL, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :682-690

[7] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J].

MANDURAH, MM ;

SARASWAT, KC ;

HELMS, CR ;

KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5755-5763

[8] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254

[9] A NOVEL MOS PROM USING A HIGHLY RESISTIVE POLY-SI RESISTOR [J].

TANIMOTO, M ;

MUROTA, J ;

OHMORI, Y ;

IEDA, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (03) :517-520

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