PHOTO-IONIZATION CROSS-SECTION OF ELECTRON-IRRADIATION INDUCED LEVELS IN SILICON

被引：6

作者：

BROTHERTON, SD

PARKER, GJ

GILL, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5112 / 5116

页数：5

共 21 条

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[3]

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[7] CHARACTERISTICS OF INFRARED PHOTODETECTORS PRODUCED BY RADIATION DOPING [J].

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[8]

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[9]

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[10]

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