NOVEL DIGITAL PHOTOSENSOR CELL IN GAAS IC USING CONVERSION OF LIGHT-INTENSITY TO PULSE FREQUENCY

被引：9

作者：

TANAKA, K

ANDO, F

TAKETOSHI, K

OHISHI, I

ASARI, G

机构：

[1] KOKUSHIKAN UNIV,FAC ENGN,SETAGAYA KU,TOKYO 157,JAPAN

[2] TOKYO INST POLYTECH,ATSUGI,KANAGAWA 24302,JAPAN

[3] ASAHI GLASS CO LTD,CTR RES & DEV,KANAGAWA KU,YOKOHAMA,KANAGAWA 221,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 11A期

关键词：

GAAS; IC; DIGITAL SENSOR; MES-FET; MSM PHOTODIODE; DYNAMIC RANGE; GAMMA-CHARACTERISTIC; IMAGE PICKUP DEVICE;

D O I：

10.1143/JJAP.32.5002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A photoelectric GaAs integrated circuit that converts light intensity to digital signal frequency has been fabricated using the GaAs MES-FET process. The circuit includes a metal-semiconductor-metal photodiode (MSM-PD), a preamplifier (PA), a Schmitt trigger (ST), a flip-flop (FF) (1-bit digital counter) and a reset (Rt) FET. This sensor cell has a wide dynamic range of over 5 decades of incident light power and a gamma characteristic suitable for an image pickup device.

引用

页码：5002 / 5007

页数：6

共 8 条

[1] GAAS OPTOELECTRONIC INTEGRATED RECEIVER WITH HIGH-OUTPUT FAST-RESPONSE CHARACTERISTICS [J].