DIFFUSION OF CHROMIUM IN SILICON DURING A SIRTL ETCHING PROCESS AT ROOM-TEMPERATURE

被引：3

作者：

LUE, JT

MEYER, O

机构：

来源：

关键词：

D O I：

10.1063/1.332087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1148 / 1150

页数：3

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SIRTL E, 1961, Z METALLKD, V52, P529

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ROY, K ;

HESSE, J .