FORMATION OF PIN HOLES IN HYDROGENATED AMORPHOUS-SILICON AT HIGH-TEMPERATURES AND THE YIELD STRENGTH OF A-SI-H

被引：51

作者：

SHANKS, HR

LEY, L

机构：

来源：

关键词：

D O I：

10.1063/1.328767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：811 / 813

页数：3

共 6 条

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[3] HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS SILICON FILMS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 302 - 304
[4] EFFECTS OF PARTIAL EVOLUTION OF H FROM A-SI-H ON THE INFRARED VIBRATIONAL-SPECTRA AND THE PHOTO-LUMINESCENCE
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 231 - 236
[5] INFRARED-SPECTRUM AND STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON
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LEY, L
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01): : 43 - 56
[6] 1955, LANDOLTBORNSTEIN 1, V4, P451