GROWTH-RATES AND MECHANISM OF ELECTROCHEMICAL VAPOR-DEPOSITED YTTRIA-STABILIZED ZIRCONIA FILMS

被引：73

作者：

CAROLAN, MF ^{[1
]}

MICHAELS, JN ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720

来源：

SOLID STATE IONICS | 1990年 / 37卷 / 2-3期

关键词：

D O I：

10.1016/0167-2738(90)90242-J

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electrochemical vapor deposition (EVD) is a leading technology to deposit thin gas tight films of yttria-stabilized zirconia (YSZ) over porous substrates for solid oxide electrolyte fuel cell or steam electrolyzer applications. EVD occrus via a tarnishing-type process where oxygen is supplied to the growing film face in the form of anions permeating the film while the zirconium and yttrium are supplied as gaseous metal chlorides. Films of YSZ were deposited onto porous substrates; film growth followed a parabolic rate law, indicating a growth mechanism which is limited by charge transport though the film. The activation energy of film growth, 3.9 eV, indicates film growth is limited by electron transport. A model for film growth is presented which is consistent with these observations. © 1990.

引用

页码：189 / 195

页数：7

共 19 条

[1] ELECTROCHEMICAL STUDIES ON PARTIAL CONDUCTIVITY, MOBILITY AND CONCENTRATION OF ELECTRONS AND DEFECT ELECTRONS IN DOPED ZIRCONIUM DIOXIDE AND THORIUM DIOXIDE [J].