ANISOTROPY OF THE FUNDAMENTAL ABSORPTION-EDGE OF TLSBS2

被引:13
作者
ROUQUETTE, P [1 ]
ALLEGRE, J [1 ]
GIL, B [1 ]
CAMASSEL, J [1 ]
MATHIEU, H [1 ]
IBANEZ, A [1 ]
JUMAS, JC [1 ]
机构
[1] UNIV MONTPELLIER 2,PHYSICOCHIM MAT INORGAN LAB,F-34060 MONTPELLIER,FRANCE
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 06期
关键词
D O I
10.1103/PhysRevB.33.4114
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4114 / 4118
页数:5
相关论文
共 17 条
[1]   NEAR-BAND-EDGE OPTICAL-PROPERTIES OF GASEXTE1-X MIXED-CRYSTALS [J].
CAMASSEL, J ;
MERLE, P ;
MATHIEU, H ;
GOUSKOV, A .
PHYSICAL REVIEW B, 1979, 19 (02) :1060-1068
[2]  
CAMASSEL J, 1978, PHYS REV B, V17, P4712
[3]   INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].
ELLIOTT, RJ .
PHYSICAL REVIEW, 1957, 108 (06) :1384-1389
[4]   GROWTH AND CHARACTERIZATION OF III-VI-LAYERED CRYSTALS LIKE GASE, GATE, INSE, GASE1-XTEX AND GAXIN1-XSE [J].
GOUSKOV, A ;
CAMASSEL, J ;
GOUSKOV, L .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1982, 5 (04) :323-413
[5]  
HULLIGER F, 1976, STRUCTURAL CHEM LAYE, P78
[6]   EXCITON-TRANSITIONS FROM SPIN-ORBIT SPLIT OFF VALENCE BANDS IN LAYER COMPOUND INSE [J].
KURODA, N ;
MUNAKATA, I ;
NISHINA, Y .
SOLID STATE COMMUNICATIONS, 1980, 33 (06) :687-691
[7]   OPTICAL-PROPERTIES OF THE BAND-EDGE EXCITON IN GASE CRYSTALS AT 10K [J].
LETOULLEC, R ;
PICCIOLI, N ;
CHERVIN, JC .
PHYSICAL REVIEW B, 1980, 22 (12) :6162-6170
[8]   ELECTROREFLECTANCE AND THERMOREFLECTANCE SPECTRA OF SNS [J].
LUKES, F ;
HUMLICEK, J ;
SCHMIDT, E .
SOLID STATE COMMUNICATIONS, 1983, 45 (05) :445-448
[9]   THERMOREFLECTANCE OF GES [J].
LUKES, F ;
SCHMIDT, E ;
LACINA, A .
SOLID STATE COMMUNICATIONS, 1981, 39 (08) :921-923
[10]  
Moss T.S., 1973, SEMICONDUCTOR OPTO E