FORMATION OF OPTICAL GAIN DUE TO EXCITON LOCALIZATION IN CDXZN1-XS-ZNS STRAINED-LAYER QUANTUM-WELLS

被引：25

作者：

YAMADA, Y ^{[1
]}

MASUMOTO, Y ^{[1
]}

TAGUCHI, T ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN,DEPT ELECT ENGN,OSAKA,JAPAN

来源：

PHYSICA B | 1993年 / 191卷 / 1-2期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/0921-4526(93)90180-E

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An exciton-related mechanism of optical gain formation has been studied in CdxZn1-xS-ZnS strained-layer quantum wells which can cover ultraviolet spectral regions. Energy states of excitons in the quantum wells are broadened inhomogeneously by alloy composition fluctuations in ternary alloy well layers in addition to interface fluctuations between well and barrier layers. Excitons created initially are therefore localized at the lower energy states of inhomogeneously broadened exciton resonance. Optical gain spectra were analyzed on the basis of a phase-space-filling effect of these localized exciton states in which the energy shift of stimulated emission from the exciton resonance were well explained. It is proposed that the localization of excitons contributes to the formation of optical gain in wide-bandgap II-VI semiconductor quantum wells.

引用

页码：83 / 89

页数：7

共 20 条

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