HIGH-POWER AND HIGH-EFFICIENCY OPERATION OF AL-FREE INGAAS/GAINASP/GAINP GRINSCH SQW LASERS LAMBDA-SIMILAR-OR-EQUAL-TO-0.98-MU-M)

High power and high quantum efficiency Al-free InGaAs/GaInAsP/GaInP GRINSCH SQW lasers emitting at 0.98mum are reported. A CW output power as high as 580mW and single lateral mode power up to 280mW were achieved for the Al-free ridge waveguide lasers at room temperature. The lasers exhibited a high internal quantum efficiency of 99% and low internal waveguide loss of 3.2cm-1. A high characteristic temperature of 217K and low threshold current density of 109 A/cm2 were also obtained. The results are the best obtained for Al-free 0.98mum pumping lasers.