0.98-1.02-MU-M STRAINED INGAAS/ALGAAS DOUBLE-QUANTUM-WELL HIGH-POWER LASERS WITH GAINP BURIED WAVE-GUIDES

被引:38
作者
ISHIKAWA, S
FUKAGAI, K
CHIDA, H
MIYAZAKI, T
FUJII, H
ENDO, K
机构
[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki
关键词
D O I
10.1109/3.234456
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
0.98-1.02-mum strained InGaAs/AlGaAs double quantum-well laser diodes (LD's) with GaInP buried wave-guides have been developed as light sources for pumping fiber amplifiers. These LD's have a flat surface and a low-loss real index waveguide that provides high differential quantum efficiency and efficient heat dissipation. For 0.98-mum LD's, stable operation for over 10 000 h under 100 mW CW conditions at 50-degrees-C has been achieved, and the extrapolated lifetime is estimated to be 60,000 h at 50-degrees-C. For 1.02-mum LD's, a maximum light output power of 415 mW, fiber output power as high as 70 mW, and stable operation for over 2300 h at 100 mW and 50-degrees-C have been obtained.
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页码:1936 / 1942
页数:7
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