HIGH-POWER INGAAS/AIGAAS SINGLEMODE LASER-DIODES SUITABLE FOR PUMPING PR3+-DOPED FLUORIDE FIBER OPTIC AMPLIFIERS

被引：7

作者：

GIGNAC, WJ

MAJOR, JS

PLANO, WE

NAM, DW

WELCH, DF

SCIFRES, D

机构：

[1] Spectra Diode Laboratories, San Jose, CA 95134

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 13期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Performance characteristics are presented for high-power, singlemode, strained-layer InGaAs/AlGaAs quantum well separate confinement laser diodes. A maximum output power of 460 m W continuous wave with single transverse mode behaviour to 245 m W is achieved in thc wavelength range 1020-1030 nm. These singlemode laser diodes have narrow far-field divergence, making them highly attractive as optical pumps for Pr3+-doped fluoride fibre optic amplifiers.

引用

页码：1232 / 1234

页数：3

共 6 条

[1] BRIERLEY M, 1992, OSA WASHINGTON, V5
[2] STRAINED-LAYER INGAAS-GAAS-ALGAAS PHOTOPUMPED AND CURRENT INJECTION-LASERS
KOLBAS, RM
ANDERSON, NG
LAIDIG, WD
SIN, YK
LO, YC
HSIEH, KY
YANG, YJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) : 1605 - 1613
[3] SYSTEM CHARACTERIZATION OF HIGH-GAIN AND HIGH SATURATED OUTPUT POWER, PR3+-DOPED FLUOROZIRCONATE FIBER AMPLIFIER AT 1.3-MU-M
LOBBETT, R
WYATT, R
EARDLEY, P
WHITLEY, TJ
SMYTH, P
SZEBESTA, D
CARTER, SF
DAVEY, ST
MILLAR, CA
BRIERLEY, MC
[J]. ELECTRONICS LETTERS, 1991, 27 (16) : 1472 - 1474
[4] SINGLE-MODE INGAAS GAAS-LASER DIODES OPERATING AT 980 NM
MAJOR, JS
PLANO, WE
WELCH, DF
SCIFRES, D
[J]. ELECTRONICS LETTERS, 1991, 27 (06) : 539 - 541
[5] MIYAJIMA Y, 1991, OSA WASHINGTON, V13
[6] ZAREM H, 1992, OSA WASHINGTON, V5

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