SUB-MICRON EPITAXIAL-FILMS

被引：8

作者：

SILVESTRI, VJ ^{[1
]}

SRINIVASAN, GR ^{[1
]}

GINSBERG, B ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1149/1.2115719

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：877 / 881

页数：5

共 11 条

[1] POST-EPITAXIAL POLYSILICON AND SI3N4 GETTERING IN SILICON [J].

CHEN, MC ;

SILVESTRI, VJ .

CHEN, MC ;

SILVESTRI, VJ .

[3]

CHU SF, 1982, ELECTROCHEMICAL SOC, P306

[4] CALCULATION OF SPREADING RESISTANCE CORRECTION FACTORS [J].

HU, SM .

[5]

JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[6] AUTODOPING EFFECTS IN SILICON EPITAXY [J].

SRINIVASAN, GR .

[7]

SRINIVASAN GR, 1981, SOLID STATE TECHNOL, V24, P101

[8]

SRINIVASAN GR, 1979, Patent No. 4153486

[9]

SRINIVASAN GR, P SILICON PROCESSING

[10]

TANG DD, 1982, IEEE T ELECTRON DEVI, V29