POST-EPITAXIAL POLYSILICON AND SI3N4 GETTERING IN SILICON

[1] CHEN JH, 1979, INT J ELECTRON, V47, P555, DOI 10.1080/00207217908938678

[2] PRE-EPITAXIAL AND POST-EPITAXIAL GETTERING OF OXIDATION AND EPITAXIAL STACKING-FAULTS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 389 - 395

[3] OXIDATION STACKING-FAULTS IN EPITAXIAL SILICON-CRYSTALS [J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (04) : 705 - 713

[4] CORRELATION OF ELECTROLYTIC-ETCH AND SURFACE-PHOTOVOLTAGE TECHNIQUES FOR THE DETECTION OF ELECTRICALLY ACTIVE DEFECTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 746 - 748

[5] Hu S.M., 1977, US Patent, Patent No. [US4053335 A, 4053335]

[6] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[7] GENERATION LIFETIME INVESTIGATION OF ION-DAMAGE GETTERED SILICON USING MOS STRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 992 - 996

[8] ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 565 - 570

[9] A CAUSE AND CURE OF STACKING FAULTS IN SILICON EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) : 5020 - +

[10] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729

[1] CHEN JH, 1979, INT J ELECTRON, V47, P555, DOI 10.1080/00207217908938678

[2] PRE-EPITAXIAL AND POST-EPITAXIAL GETTERING OF OXIDATION AND EPITAXIAL STACKING-FAULTS IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 389 - 395

[3] OXIDATION STACKING-FAULTS IN EPITAXIAL SILICON-CRYSTALS [J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (04) : 705 - 713

[4] CORRELATION OF ELECTROLYTIC-ETCH AND SURFACE-PHOTOVOLTAGE TECHNIQUES FOR THE DETECTION OF ELECTRICALLY ACTIVE DEFECTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 746 - 748

[5] Hu S.M., 1977, US Patent, Patent No. [US4053335 A, 4053335]

[6] JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[7] GENERATION LIFETIME INVESTIGATION OF ION-DAMAGE GETTERED SILICON USING MOS STRUCTURE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 992 - 996

[8] ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 565 - 570

[9] A CAUSE AND CURE OF STACKING FAULTS IN SILICON EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) : 5020 - +

[10] ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1725 - 1729