PROPERTIES OF TITANIUM IN INP

被引：11

作者：

BREMOND, G ^{[1
]}

GUILLOT, G ^{[1
]}

NOUAILHAT, A ^{[1
]}

LAMBERT, B ^{[1
]}

TOUDIC, Y ^{[1
]}

GAUNEAU, M ^{[1
]}

DEVEAUD, B ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,LAB ICM,F-22301 LANNION,FRANCE

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 24期

关键词：

D O I：

10.1088/0022-3719/19/24/014

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4723 / 4728

页数：6

共 15 条

[1]

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[2]

BREMOND G, 1986, UNPUB J APPL PHYS

[3]

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[4] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS [J].

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[5] THE ACCEPTOR LEVEL OF VANADIUM IN III-V COMPOUNDS [J].

CLERJAUD, B ;

NAUD, C ;

DEVEAUD, B ;

LAMBERT, B ;

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BREMOND, G ;

BENJEDDOU, C ;

GUILLOT, G ;

NOUAILHAT, A .

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[6] SYNTHESIS, CRYSTAL-GROWTH AND CHARACTERIZATION OF INP [J].

COQUILLE, R ;

TOUDIC, Y ;

GAUNEAU, M ;

GRANDPIERRE, G ;

PARIS, JC .

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[7] THE DONOR LEVEL OF VANADIUM IN INP [J].

DEVEAUD, B ;

PLOT, B ;

LAMBERT, B ;

BREMOND, G ;

GUILLOT, G ;

NOUAILHAT, A ;

CLERJAUD, B ;

NAUD, C .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3126-3130

[8]

GAUNEAU M, 1986, UNPUB J CRYSTAL GROW

[9] REDISTRIBUTION OF FE IN THERMALLY ANNEALED SEMI-INSULATING INP(FE) - DETERMINATION OF FE DIFFUSION-COEFFICIENT IN INP [J].

KAMADA, H ;

SHINOYAMA, S ;

KATSUI, A .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :2881-2884

[10] COMMENTS ON THEORY OF PHOTOIONIZATION OF TRANSITION METAL IMPURITIES IN SEMICONDUCTORS [J].

LANGER, JM .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 47 (02) :443-&

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