THE PROPERTIES OF BORON-CARBIDE SILICON HETEROJUNCTION DIODES FABRICATED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

被引：51

作者：

LEE, SW

DOWBEN, PA

机构：

[1] UNIV NEBRASKA,DEPT PHYS & ASTRON,BEHLEN LAB PHYS,LINCOLN,NE 68588

[2] SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244

[3] SYRACUSE UNIV,SOLID STATE SCI & TECHNOL PROGRAM,SYRACUSE,NY 13244

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 58卷 / 03期

关键词：

81.15.Gh; 82.30.Lp;

D O I：

10.1007/BF00324380

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

p-n heterojunction diodes have been fabricated from boron carbide (B1-xCx) and n-type Si(111). Boron carbide thin films were deposited on Si(111) using Plasma-Enhanced Chemical Vapor Deposition (PECVD) from nido-pentaborane (B5H9) and methane (CH4). Composition of boron carbide thin films was controlled by changing the relative partial pressure ratio between nido-pentaborane and methane. The properties of the diodes were strongly affected by the composition and thickness of boron carbide layer and operation temperatures. Boron carbide/silicon heterojunction diodes show rectifying properties at temperatures below 300-degrees-C. The temperature dependence of reverse current is strongly dependent upon the energy of the band gap of the boron carbide films.

引用

页码：223 / 227

页数：5

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