INCIPIENT AMORPHOUS-TO-CRYSTALLINE TRANSITION IN GE

被引：40

作者：

STERN, EA

BOULDIN, CE

VONROEDERN, B

AZOULAY, J

机构：

[1] HARVARD UNIV,DIV APPL SCI,GORDON MCKAY LAB,CAMBRIDGE,MA 02138

[2] TEL AVIV UNIV,DEPT ELECTRON DEVICES MAT & ELECTROMAGNET RADIAT,IL-69978 TEL AVIV,ISRAEL

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.27.6557

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6557 / 6560

页数：4

共 16 条

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[2]

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[5]

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[7] AMBIENT INDUCED CHANGES OF CONDUCTANCE OF AMORPHOUS GERMANIUM [J].

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MATERIALS RESEARCH BULLETIN, 1970, 5 (08) :631-+

[8]

Paesler M. A., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P229

[9]

PAESLER MA, UNPUB

[10] STRUCTURAL MODEL FOR INTERFACE BETWEEN AMORPHOUS AND CRYSTALLINE SI OR GE [J].

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