STRUCTURAL MODEL FOR INTERFACE BETWEEN AMORPHOUS AND CRYSTALLINE SI OR GE

[1] ANISOTROPY OF STRUCTURAL MODELS FOR AMORPHOUS MATERIALS [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 835 - 842

[2] Barna A., 1972, J NONCRYSTALL SOLIDS, V8-10, P36, DOI DOI 10.1016/0022-3093(72)90114-7

[3] BOUDREAUX DS, 1974, P INT C TETRAHEDRALL, V20, P206

[4] PHENOMENOLOGICAL MODEL FOR PHOTOCRYSTALLIZATION PROCESS [J]. PHYSICS LETTERS A, 1975, 54 (06) : 444 - 446

[5] Chaudhari P., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P59

[6] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4214 - &

[7] CHIK KP, 1975, THIN SOLID FILMS, V35, P45

[8] MODELING STRUCTURE OF AMORPHOUS TETRAHEDRALLY COORDINATED SEMICONDUCTORS .1. [J]. PHYSICAL REVIEW B, 1974, 9 (12): : 5323 - 5326

[9] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (11) : 1019 - 1021

[10] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[1] ANISOTROPY OF STRUCTURAL MODELS FOR AMORPHOUS MATERIALS [J]. PHYSICAL REVIEW B, 1976, 13 (02): : 835 - 842

[2] Barna A., 1972, J NONCRYSTALL SOLIDS, V8-10, P36, DOI DOI 10.1016/0022-3093(72)90114-7

[3] BOUDREAUX DS, 1974, P INT C TETRAHEDRALL, V20, P206

[4] PHENOMENOLOGICAL MODEL FOR PHOTOCRYSTALLIZATION PROCESS [J]. PHYSICS LETTERS A, 1975, 54 (06) : 444 - 446

[5] Chaudhari P., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P59

[6] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4214 - &

[7] CHIK KP, 1975, THIN SOLID FILMS, V35, P45

[8] MODELING STRUCTURE OF AMORPHOUS TETRAHEDRALLY COORDINATED SEMICONDUCTORS .1. [J]. PHYSICAL REVIEW B, 1974, 9 (12): : 5323 - 5326

[9] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (11) : 1019 - 1021

[10] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158