PHENOMENOLOGICAL MODEL FOR PHOTOCRYSTALLIZATION PROCESS

被引：13

作者：

BOURGOIN, JC ^{[1
]}

GERMAIN, P ^{[1
]}

机构：

[1] UNIV PARIS 7,ECOLE NORM SUPER,CNRS,GRP PHYS SOLIDES,2 PL JUSSIEU,TOUR 23,75221 PARIS,FRANCE

来源：

PHYSICS LETTERS A | 1975年 / 54卷 / 06期

关键词：

D O I：

10.1016/0375-9601(75)90805-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：444 / 446

页数：3

相关论文

共 12 条

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[2] BOURGOIN JC, 1973, J CHEM PHYS, V59, P4042, DOI [10.1063/1.1680596, 10.1063/1.433143]
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[4] ELECTRONIC PROCESSES IN PHOTO-CRYSTALLIZATION OF VITREOUS SELENIUM
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[5] NEW PHENOMENON IN SEMICONDUCTOR JUNCTIONS - GAAS DUPLEX DIODES
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[6] RAPID REVERSIBLE LIGHT-INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS
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[J]. APPLIED PHYSICS LETTERS, 1971, 18 (06) : 254 - +
[7] PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING (AU, 77 DEGREES K) IN GAAS TUNNEL DIODES
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[J]. PHYSICAL REVIEW LETTERS, 1970, 24 (11) : 589 - &
[8] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES
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[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (20) : 1450 - +
[9] ON-STATE CHARACTERISTICS OF AMORPHOUS-CRYSTALLINE HETEROJUNCTIONS
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[10] [No title captured]