NEW PHENOMENON IN SEMICONDUCTOR JUNCTIONS - GAAS DUPLEX DIODES

[1] PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING (AU, 77 DEGREES K) IN GAAS TUNNEL DIODES [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (11) : 589 - &

[2] LUDWIG CW, 1962, SOLID STATE PHYS, V13, P223

[3] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[4] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &

[5] LUMINESCENCE OF GAAS GROWN IN OXYGEN [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3274 - &

[1] PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING (AU, 77 DEGREES K) IN GAAS TUNNEL DIODES [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (11) : 589 - &

[2] LUDWIG CW, 1962, SOLID STATE PHYS, V13, P223

[3] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[4] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &

[5] LUMINESCENCE OF GAAS GROWN IN OXYGEN [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3274 - &