SYNCHROTRON RADIATION STIMULATED SEMICONDUCTOR PROCESSES - CHEMICAL VAPOR-DEPOSITION AND ETCHING

被引：32

作者：

URISU, T

KYURAGI, H

UTSUMI, Y

TAKAHASHI, J

KITAMURA, M

机构：

来源：

关键词：

D O I：

10.1063/1.1140807

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：2157 / 2159

页数：3

共 6 条

[1] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J].

FLAMM, DL ;

DONNELLY, VM ;

MUCHA, JA .

[2] SYNCHROTRON RADIATION-ASSISTED ETCHING OF SILICON SURFACE [J].

HAYASAKA, N ;

HIRAYA, A ;

SHOBATAKE, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07) :L1110-L1112

KYURAGI, H ;

URISU, T .

[4]

KYURAGI H, 1987, APPL PHYS LETT, V50, P1245

[5]

TAKAHASHI J, 1988, 20TH C SOL STAT DEV, P730

URISU, T ;

KYURAGI, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1436-1440