THE INFLUENCE OF ACCUMULATION ON THE HALL-EFFECT IN NORMAL-TYPE HG1-XCDXTE

The presence of an electron accumulation layer on the surface of n-type Hg1-xCdxTe causes the measured Hall mobility and carrier concentration to be significantly different from the actual bulk values. This discrepancy is not readily apparent in the temperature dependence of the Hall coefficient, RH, as is the case with p-type layers. However, it is observed in the magnetic-field dependence of the RH. The B-field dependence of RH was analyzed to extract the actual concentration and mobility of the bulk and surface carriers in Hg1-xCdxTe layers grown by organometallic vapor phase epitaxy. The bulk parameters thus calculated were verified by passivating the surface of these layers using an anodic sulfide to reduce the concentration of surface electrons. © 1990.