HIGH-FIELD ELECTRON-TRANSPORT IN INXGA1-XASYP1-Y(LAMBDA-G=1.2-MU-M)

被引：7

作者：

WINDHORN, TH

COOK, LW

STILLMAN, GE

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 11期

关键词：

D O I：

10.1063/1.93402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1065 / 1067

页数：3

共 15 条

[1] EVIDENCE FOR ALLOY SCATTERING FROM PRESSURE-INDUCED CHANGES OF ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y
ADAMS, AR
TATHAM, HL
HAYES, JR
ELSABBAHY, AN
[J]. ELECTRONICS LETTERS, 1980, 16 (14) : 560 - 562
[2] CALCULATIONS OF THE INTRINSICALLY HIGHER TEMPERATURE STABILITY OF ELECTRONIC DEVICES MADE FROM QUATERNARY ALLOYS
ADAMS, AR
[J]. ELECTRONICS LETTERS, 1980, 16 (05) : 177 - 178
[3] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS
BANDY, S
NISHIMOTO, C
HYDER, S
HOOPER, C
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819
[4] EVANS AGR, 1974, SOLID STATE ELECTRON, V17, P804
[5] BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS
GREENE, PD
WHEELER, SA
ADAMS, AR
ELSABBAHY, AN
AHMAD, CN
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 78 - 80
[6] HAYES JR, 1982, J ELECTRON MATER, V11, P155, DOI 10.1007/BF02654614
[7] OBSERVATION OF TRANSFERRED-ELECTRON EFFECT IN GAXIN1-XASYP1-Y
HAYES, RE
RAYMOND, RM
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 300 - 301
[8] TEMPERATURE-DEPENDENCE OF THE TRANSFERRED ELECTRON THRESHOLD CURRENTIN IN1-XGAXASYP1-Y
HEASMAN, KC
HAYES, JR
ADAMS, AR
GREENE, PD
[J]. ELECTRONICS LETTERS, 1981, 17 (20) : 756 - 757
[9] HOT-ELECTRON AND MAGNETO-TRANSPORT PROPERTIES OF IN1-XGAXP1-YASY LIQUID-PHASE EPITAXIAL-FILMS
HOUSTON, B
RESTORFF, JB
ALLGAIER, RS
BURKE, JR
FERRY, DK
ANTYPAS, GA
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 91 - 94
[10] COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y
LEHENY, RF
BALLMAN, AA
DEWINTER, JC
NAHORY, RE
POLLACK, MA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 561 - 568

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