DEFECT PASSIVATION IN MULTICRYSTALLINE-SI MATERIALS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2/SIN COATINGS

被引：30

作者：

CHEN, Z ^{[1
]}

ROHATGI, A ^{[1
]}

BELL, RO ^{[1
]}

KALEJS, JP ^{[1
]}

机构：

[1] MOBIL SOLAR ENERGY CORP,BILLERICA,MA 01821

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 16期

关键词：

D O I：

10.1063/1.112798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown for the first time that plasma-enhanced chemical vapor deposition (PECVD) passivation which involves low temperature PECVD of approximately 100 angstrom SiO2 and approximately600 angstrom SiN followed by photoassisted anneal is very effective for both surface and bulk defect passivation in multicrystalline-Si materials. It is found that the effective recombination lifetime increased by a factor of 2-10 depending upon the multicrystalline material. Some solar cells were fabricated using a three-layer PECVD coating (100 angstrom SiO2/600 angstrom SiN/950 angstrom SiO2), the bottom two for passivation and the top two for antireflection coating. The bulk and surface passivation effects were quantified and decoupled by a combination of internal quantum efficiency measurements and computer modeling. It was found that the PECVD passivated solar cells increased bulk lifetime from 10 to 20 mus, and decreased the surface recombination velocity from 2x10(5) to 5x10(4) cm/s. (C) 1994 American Institute of Physics.

引用

页码：2078 / 2080

页数：3

共 15 条

[1]

BASORE PA, 1991, SAND910516 SAND REP

[2] PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED OXIDE FOR LOW SURFACE RECOMBINATION VELOCITY AND HIGH EFFECTIVE LIFETIME IN SILICON [J].