RECORD LOW SIO2/SI INTERFACE STATE DENSITY FOR LOW-TEMPERATURE OXIDES PREPARED BY DIRECT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

被引:33
作者
CHEN, Z
YASUTAKE, K
DOOLITTLE, A
ROHATGI, A
机构
[1] School of Electrical Engineering, Georgia Institute of Technology, Atlanta
关键词
D O I
10.1063/1.110558
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new process has been developed to achieve a very low SiO2/Si interface state density for low temperature deposited oxides on silicon substrates. The technique involves direct plasma-enhanced chemical vapor deposition (PECVD), with appropriate growth conditions, followed by a photo-assisted anneal. Approximately 500-angstrom-thick SiO2 layers, deposited on Si by PECVD at 250-degrees-C with 0.02 W/cm-2 rf power, then covered with an evaporated thin aluminum layer, and finally subjected to a photo-assisted anneal in forming gas ambient at 350-degrees-C, resulted in interface state density, (D(it)), in the range of 1-4 x 10(10) cm-2 eV-1 near midgap of silicon. The best D(it) value achieved in this study was 1.1 x 10(10) cm-2 eV-1, which sets a new record for the lowest D(it) for the PECVD oxides fabricated to date. Detailed analysis showed that the PECVD deposition conditions, photo-assisted anneal, forming gas ambient, and the presence of an aluminum layer on top of the oxides during the anneal, all contributed to this extremely low value of D(it).
引用
收藏
页码:2117 / 2119
页数:3
相关论文
共 10 条