INFLUENCE OF STOICHIOMETRY AND HYDROGEN-BONDING ON THE INSULATING PROPERTIES OF PECVD SILICON-NITRIDE

被引：18

作者：

CHAUSSAT, C ^{[1
]}

BUSTARRET, E ^{[1
]}

BRUYERE, JC ^{[1
]}

GROLEAU, R ^{[1
]}

机构：

[1] UNIV MONTREAL,PHYS NUCL LAB,MONTREAL H3C 3J7,QUEBEC,CANADA

来源：

PHYSICA B & C | 1985年 / 129卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(85)90572-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：215 / 219

页数：5

共 10 条

[1] VIBRATIONAL-SPECTRA OF HYDROGEN IN SILICON AND GERMANIUM
CARDONA, M
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02): : 463 - 481
[2] CHAUSSAT C, UNPUB
[3] HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES
CHOW, R
LANFORD, WA
WANG, KM
ROSLER, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5630 - 5633
[4] CLAASSEN WAP, ESSDERC 83
[5] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE
LANFORD, WA
RAND, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2473 - 2477
[6] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS
LUCOVSKY, G
[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (08) : 571 - 576
[7] NGUYEN TV, UNPUB
[8] Sanderson R. T., 1976, CHEM BONDS BOND ENER
[9] PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SINX ALLOYS
SASAKI, G
KONDO, M
FUJITA, S
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10): : 1394 - 1399
[10] FORMATION OF THIN SI3N4 FILMS BY NITROGEN ION-IMPLANTATION INTO SILICON
YADAV, AD
JOSHI, MC
[J]. THIN SOLID FILMS, 1979, 59 (03) : 313 - 317